mar. 2003 mitsubishi hvigbt modules cm600e2y-34h high power switching use insulated type i c ................................................................... 600a v ces ....................................................... 1700v insulated type 1-elements in a pack (for brake) application dc choppers, dynamic braking choppers. cm600e2y-34h hvigbt modules (high voltage insulated gate bipolar transistor modules) outline drawing & circuit diagram dimensions in mm hvigbt (high voltage insulated gate bipolar transistor) modules e2 c2 e1 g1 c1 e1 c1 cm g1 c2 e2 e1 c1 3 - m4 nuts 4 - m8 nuts c1 e1 g2 e2 c2 114 31.5 53 40 28 14 20 30 130 16 5 38 11.85 55.2 11.5 35 5 6 - 7 mounting holes 57 0.25 57 0.25 124 0.25 140 label circuit diagram
mar. 2003 mitsubishi hvigbt modules cm600e2y-34h high power switching use insulated type hvigbt modules (high voltage insulated gate bipolar transistor modules) maximum ratings (tj = 25 c) v ge = 0v v ce = 0v dc, t c = 95 c pulse (note 1) pulse (note 1) t c = 25 c, igbt part charged part to base plate, rms, sinusoidal, ac 60hz 1min. main terminals screw m8 mounting screw m6 auxiliary terminals screw m4 typical value 1700 20 600 1200 600 1200 6900 ?0 ~ +150 ?0 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 v v a a a a w c c v n? n? n? kg collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage mounting torque mass collector current emitter current symbol item conditions unit ratings v v v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 850v, i c = 600a, v ge = 15v v cc = 850v, i c = 600a v ge1 = v ge2 = 15v r g = 3.3 ? resistive load switching operation i e = 600a, v ge = 0v i e = 600a die / dt = ?200a / s junction to case, igbt part junction to case, fwdi part case to fin, conductive grease applied (per 1/2 module) i f = 600a, clamp diode part i f = 600a di f / dt = ?200a / s, clamp diode part junction to case, clamp diode part case to fin, conductive grease applied (per 1/2 module) i c = 60ma, v ce = 10v i c = 600a, v ge = 15v (note 4) v ce = 10v v ge = 0v 15 0.5 3.58 1.20 1.50 2.00 0.60 3.12 2.00 0.018 0.056 3.25 2.00 0.056 ma a nf nf nf c s s s s v s c k/w k/w k/w v s c k/w k/w 2.75 3.30 70 10.0 3.8 3.3 2.40 100 0.016 2.50 100 0.016 5.5 4.5 6.5 collector cutoff current gate-emitter threshold voltage gate-leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge contact thermal resistance forward voltage reverse recovery time reverse recovery charge thermal resistance contact thermal resistance min typ max i ces i ges c ies c oes c res q g t d (on) t r t d (off) t f v ec (note 2) t rr (note 2) q rr (note 2) r th(j-c)q r th(j-c)r r th(c-f) v fm t rr q rr r th(j-c) r th(c-f) electrical characteristics (tj = 25 c) symbol item conditions v ge(th) v ce(sat) limits unit thermal resistance hvigbt (high voltage insulated gate bipolar transistor) modules v ces v ges i c i cm i e (note 2) i em (note 2) p c (note 3) t j t stg v iso note 1. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 2. i e , v ec , t rr , q rr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise.
mar. 2003 mitsubishi hvigbt modules cm600e2y-34h high power switching use insulated type hvigbt (high voltage insulated gate bipolar transistor) modules performance curves 800 1000 1200 400 200 0 10 0 2 468 600 800 1000 1200 400 200 0 600 20 0481216 020 16 12 8 4 10 8 6 4 2 0 t j = 25 c t j = 25 c v ge = 13v v ge = 11v v ge = 12v v ge = 10v v ge = 9v v ge = 8v v ge = 7v v ge = 14v v ge = 15v v ge = 20v i c = 1200a i c = 600a i c = 240a v ce = 10v t j = 25 c t j = 125 c 10 1 23 10 1 5710 0 23 5710 1 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 c ies c oes c res v ge = 0v, t j = 25 c c ies, c oes : f = 100khz c res : f = 1mhz 0 5 4 3 1 2 0 200 400 600 800 1000 1200 v ge = 15v t j = 25 c t j = 125 c capacitance characteristics ( typical ) capacitance c ies , c oes , c res ( nf ) collector-emitter voltage v ce ( v ) output characteristics ( typical ) collector current i c ( a ) transfer characteristics ( typical ) collector current i c ( a ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) collector-emitter saturation voltage characteristics ( typical ) collector-emitter voltage v ce ( v ) collector-emitter saturation voltage v ce(sat) ( v ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage characteristics ( typical ) 0 200 400 600 800 1000 1200 free-wheel diode forward characteristics ( typical ) emitter-collector voltage v ec ( v ) emitter current i e ( a ) 5 4 3 2 1 0 t j = 25 c t j = 125 c
mar. 2003 mitsubishi hvigbt modules cm600e2y-34h high power switching use insulated type hvigbt (high voltage insulated gate bipolar transistor) modules 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 t d(off) v cc = 850v, v ge = 15v r g = 3.3 ? , t j = 125 c inductive load t d(on) t r t f v cc = 850v, t j = 125 c inductive load v ge = 15v, r g = 3.3 ? t rr i rr 7 5 3 2 10 2 7 5 5 3 2 10 3 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 single pulse t c = 25 c r th(j c)q = 0.018k/ w r th(j c)r = 0.056k/ w (per 1/2 module) 20 16 12 8 4 0 4000 5000 3000 0 1000 2000 v cc = 850v i c = 600a half-bridge switching time characteristics ( typical ) switching times ( s ) collector current i c ( a ) reverse recovery characteristics of free-wheel diode ( typical ) reverse recovery time t rr ( s ) emitter current i e ( a ) reverse recovery current i rr ( a ) transient thermal impedance characteristics normalized transient thermal impedance z th(j c) time ( s ) gate charge characteristics ( typical ) gate-emitter voltage v ge ( v ) gate charge q g ( nc ) switching energy ( j/p ) 0 0.2 0.4 0.6 0.8 1.0 half-bridge switching energy characteristics ( typical ) current ( a ) 0 200 400 1200 1000 800 600 v cc = 850v, v ge = 15v, r g = 3.3 ? , tj = 125 c, inductive load e on e off e rec 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1020304050 gate resistance ( ? ) half-bridge switching energy characteristics ( typical ) switching energy ( j/p ) v cc = 850v, i c = 600a, v ge = 15v, tj = 125 c, inductive load e on e off e rec
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